Author: Bello Hamza Abdullahi, Jamilu Tijjani Baraya and *Nura Muhammad Shehu

Abstract:

The quantum efficiency of crystal silicon (i.e photosensitive device) is enhanced by making it porous so that it absorbs most of the photons falling on its surface in order to produce charge carriers, and as a result of this stage a heterojunction is as well formed. The porous side is doped with an impurity which is different from that of the wafer impurity used to form P-N junction, at last two contacts are taken from the porous side and the back side, gold and silver respectively to form ohmic and schottky junction which also contributed to achieve the final goal.